Ion Beam Sputtering Thesis

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This paper presents a review of Ion Beam Technology.

In this review the main applications and advantages of using Ion Beam technology for deposition processes when compared to technology such as plasma or evaporation (PVD) will be presented.

The RF field excites free electrons until they have enough energy to break gas atoms into ions and electrons; this is referred to as “inductive coupling“.

The gas is thus ionized and a plasma is established.

The FEI 2LE column, which utilizes Schottky emission, electrostatic focusing optics, and stacked-disk column construction, can provide high-resolution (as small as 20 nm) imaging capability, with fairly long working distance (25 mm) at 25 ke V beam voltage.

Such an integrated FIB/SEM dual-beam system will not only improve the accuracy and reproducibility when performing ion beam sculpting and direct implantation processes, but will also enable researchers to perform cross-sectioning, imaging, and analysis with the same tool.

In this thesis, three novel ion beam tools have been developed and investigated as the alternatives for the conventional FIB systems in some particular applications.

An integrated focused ion beam (FIB) and scanning electron microscope (SEM) system has been developed for direct doping or surface modification.

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For over decades, focused ion beam (FIB) has been playing a very important role in microscale technology and research, among which, semiconductor microfabrication is one of its biggest application area.


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